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Si1021R
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 0.25 mA
- 60
-1
- 3.0
V
V DS = 0 V, V GS = ± 20 V
± 10
μA
Gate-Body Leakage
Zero Gate Voltage Drain Current
I GSS
I DSS
V DS = 0 V, V GS = ± 10 V
V DS = 0 V, V GS = ± 10 V, T J = 85 °C
V DS = 0 V, V GS = ± 5 V
V DS = - 50 V, V GS = 0 V
V DS = - 50 V, V GS = 0 V, T J = 85 °C
± 200
± 500
± 100
- 25
- 250
nA
On-State Drain Current a
I D(on)
V DS = -10 V, V GS = - 4.5 V
V DS = -10 V, V GS = - 10 V
- 50
- 600
mA
V GS = - 4.5 V, I D = - 25 mA
8
Drain-Source On-State Resistance
a
R DS(on)
V GS = - 10 V, I D = - 500 mA
4
?
V GS = - 10 V, I D = - 500 mA, T J = 125 °C
6
Forward Transconductance
Diode Forward Voltage a
g fs
V SD
V DS = - 10 V, I D = - 100 mA
V DS = - 200 mA, V GS = 0 V
80
80
mS
V
Dynamic
Total Gate Charge
Q g
1.7
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q gs
Q gd
C iss
C oss
C rss
V DS = - 30 V, V GS = - 15 V, I D ? - 500 mA
V DS = - 25 V, V GS = 0 V, f = 1 MHz
0.26
0.46
23
10
5
nC
pF
Switching b
Turn-On Time
Turn-Off Time
t ON
t OFF
V DD = - 25 V, R L = 150 ? ,
I D ? - 200 mA, V GEN = - 10 V, R g = 10 ?
20
35
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71410
S10-2687-Rev. F, 22-Nov-10
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